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Datasheet FRK250 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | FRK250 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRK250
DESCRIPTION ·27A, 200V, RDS(on) = 0.1Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to to |
Inchange Semiconductor |
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3 | FRK250D | 27A/ 200V/ 0.100 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK250D, FRK250R, FRK250H
June 1998
27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 27A, 200V, RDS(on) = 0.100Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |
Intersil |
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2 | FRK250H | 27A/ 200V/ 0.100 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK250D, FRK250R, FRK250H
June 1998
27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 27A, 200V, RDS(on) = 0.100Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |
Intersil |
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1 | FRK250R | 27A/ 200V/ 0.100 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK250D, FRK250R, FRK250H
June 1998
27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 27A, 200V, RDS(on) = 0.100Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |
Intersil |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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