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Datasheet FRK160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FRK160 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRK160
DESCRIPTION ·40A, 100V, RDS(on) = 0.04Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to t |
 Inchange Semiconductor |
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| 3 | FRK160D | 50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK160D, FRK160R, FRK160H
June 1998
50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 50A, 100V, RDS(on) = 0.040Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |
 Intersil |
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| 2 | FRK160H | 50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK160D, FRK160R, FRK160H
June 1998
50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 50A, 100V, RDS(on) = 0.040Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |
Intersil |
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| 1 | FRK160R | 50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK160D, FRK160R, FRK160H
June 1998
50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 50A, 100V, RDS(on) = 0.040Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |
Intersil |
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