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Datasheet FQT1N60C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 FQT1N60C   N-Channel QFET MOSFET

FQT1N60C N-Channel MOSFET FQT1N60C 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQT1N60C pdf

FQT1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
FQT1N60C

N-Channel QFET MOSFET

FQT1N60C N-Channel MOSFET FQT1N60C 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor
FQT1N80

N-Channel MOSFET

FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capabi
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor
FQT1N80TF

N-Channel MOSFET

FQT1N80TF_WS N-Channel MOSFET August 2011 QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/d
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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