Datasheet FQP6N90C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQP6N90C	900V N-Channel MOSFET FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-sta	Fairchild Semiconductor

FQP6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQP6N60	600V N-Channel MOSFET FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim	Fairchild Semiconductor
FQP6N90C	900V N-Channel MOSFET FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailore	Fairchild Semiconductor
FQP6N80C	800V N-Channel MOSFET FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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