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Datasheet FQP5N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FQP5N60 | 600V N-Channel MOSFET FQP5N60
April 2000
QFET
FQP5N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista |
 Fairchild Semiconductor |
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| 2 | FQP5N60 | FQP5N60 FQP5N60
热阻特性
参数名称 芯片对管壳热阻 芯片对环境的热阻 符号 RθJC RθJA SVD5N60AT 1.25 62.5 SVD5N60AF 3.79 62.5 单位 °C/W °C/W
关断特性参数(除非特殊说明，TC=25°C)
参 数 漏源击穿电压 漏源漏电流 栅源漏电流 栅极开启电压 导通电� |
 TOBA |
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| 1 | FQP5N60C | 600V N-Channel MOSFET FQP5N60C/FQPF5N60C
QFET
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-sta |
Fairchild Semiconductor |
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