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Datasheet FQD1N60C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FQD1N60C | 600V N-Channel MOSFET FQD1N60C / FQU1N60C
QFET
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minim |
 Fairchild Semiconductor |
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| 2 | FQD1N60C | 600V N-Channel MOSFET FQD1N60C / FQU1N60C
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V • Low gate charge ( typical 4.8nC) transistors are produced using Corise Semiconductorÿs proprietary, • Low |
 Kersemi Electronic |
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| 1 | FQD1N60C | N-Channel MOSFET 1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
公司型号 通俗命名
H
FQU1N60C FQD1N60C
H1N60U H1N60D
1N60
HAOHAI
封装标识
U: TO-251 D: TO-252
1N60 Series
N-Channel MOSFET
包装方式
每管数量
每盒数量
条管装 载带卷盘
80只/管 2.5K/ |
 HAOHAI |
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