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Datasheet FQD1N50B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 FQD1N50B   500V N-Channel MOSFET

FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQD1N50B pdf

FQD1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
FQD1N80

800V N-Channel MOSFET

FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor
FQD1N60C

N-Channel MOSFET

1.3A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 公司型号 通俗命名 H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI 封装标识 U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 包装方式 每管数量 每盒数量 条管装 载带卷�
HAOHAI
HAOHAI
datasheet pdf - HAOHAI
FQD1N60C

600V N-Channel MOSFET

FQD1N60C / FQU1N60C QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especiall
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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