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Datasheet FQB8N60C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FQB8N60C | 600V N-Channel MOSFET FQB8N60C / FQI8N60C
QFET
FQB8N60C / FQI8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-s |
 Fairchild Semiconductor |
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| 1 | FQB8N60CF | N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET
December 2005
FRFET
FQB8N60CF
600V N-Channel MOSFET
Features
• 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 12pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
T |
Fairchild Semiconductor |
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