Datasheet FQB3N60C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQB3N60C	600V N-Channel MOSFET FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel MOSFET Features • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Ch	Fairchild Semiconductor

FQB3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQB3N80	800V N-Channel MOSFET FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been espe	Fairchild Semiconductor
FQB3N60C	600V N-Channel MOSFET FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel MOSFET Features • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM De	Fairchild Semiconductor
FQB3N60	600V N-Channel MOSFET FQB3N60 / FQI3N60 April 2000 QFET FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especial	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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