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Datasheet FQA11N90 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | FQA11N90 | 900V N-Channel MOSFET FQA11N90
September 2000
QFET
FQA11N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r |
Fairchild Semiconductor |
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3 | FQA11N90C | 900V N-Channel MOSFET FQA11N90C 900V N-Channel MOSFET
September 2006
QFET
FQA11N90C
900V N-Channel MOSFET
Features
• • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability
®
Description
The |
Fairchild Semiconductor |
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2 | FQA11N90C_F109 | MOSFET ( Transistor ) FQA11N90C_F109 — N-Channel QFET® MOSFET
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compliant
April 2014
Desc |
Fairchild Semiconductor |
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1 | FQA11N90_F109 | N-Channel QFET MOSFET FQA11N90_F109 — N-Channel QFET® MOSFET
FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
• Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS compliant
June 2014
Des |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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