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Datasheet FMP06N60E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FMP06N60E | N-CHANNEL SILICON POWER MOSFET FMP06N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI PO |
Fuji Electric |
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1 | FMP06N60ES | N-CHANNEL SILICON POWER MOSFET FMP06N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability
FUJI |
Fuji Electric |
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Número de pieza | Descripción | Fabricantes | |
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