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Datasheet FLU17XM Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 FLU17XM   L-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=32.5dBm (Typ.) • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU17XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17XM is a GaAs FET designed for base station appl
Fujitsu
Fujitsu
datasheet FLU17XM pdf

FLU1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
FLU17ZME1

L-Band Medium & High Power GaAs FET

FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up
SUMITOMO
SUMITOMO
datasheet pdf - SUMITOMO
FLU10ZME1

L-Band Medium & High Power GaAs FET

FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up
SUMITOMO
SUMITOMO
datasheet pdf - SUMITOMO
FLU10XM

L-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU10XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10XM is a GaAs FET designed f
Eudyna Devices
Eudyna Devices
datasheet pdf - Eudyna Devices


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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