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Datasheet FLM5964-35F Equivalent ( PDF ) |
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| 2 | FLM5964-35F | C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is internally matched for standard communi |
 Eudyna Devices |
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| 1 | FLM5964-35F | C-Band Internally Matched FET FLM5964-35F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs F |
 SUMITOMO |
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