Datasheet FJD3076 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FJD3076	NPN Epitaxial Silicon Transistor FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Colle	Fairchild Semiconductor

FJD3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FJD3305H1	NPN Silicon Transistor FJD3305H1 — NPN Silicon Transistor April 2009 FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 DPAK 1. Base 2. Collector 3. Emitter Absolute Maximu	Fairchild Semiconductor
FJD3076	NPN Epitaxial Silicon Transistor FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collecto	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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