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Datasheet FGS15N40L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | FGS15N40L | Electrical Characteristics of IGBT FGS15N40L
September 2001
IGBT
FGS15N40L
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application |
 Fairchild Semiconductor |
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FGS15N Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| FGS15N40L | Electrical Characteristics of IGBT |
Fairchild Semiconductor |
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