Datasheet FGL60N100D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FGL60N100D	Electrical Characteristics of IGBT FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features •	Fairchild Semiconductor

FGL60N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FGL60N100BNTD	NPT-Trench IGBT FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014	Fairchild Semiconductor
FGL60N170D	Electrical Characteristics of IGBT FGL60N170D October 2001 IGBT FGL60N170D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. Features • • • • High Speed Switching Low Sat	Fairchild Semiconductor
FGL60N100D	Electrical Characteristics of IGBT FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applicat	Fairchild Semiconductor

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