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Datasheet FGD3N60LSD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | FGD3N60LSD | IGBT FGD3N60LSD IGBT
September 2006
FGD3N60LSD
IGBT
Features
• High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance
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Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is design |
Fairchild Semiconductor |
FGD3N60 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
FGD3N60LSD | IGBT |
Fairchild Semiconductor |
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FGD3N60UNDF | Short Circuit Rated IGBT |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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