Datasheet FDU6N20 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDU6N20	MOSFET ( Transistor ) FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8Ω Features • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low gate charge ( Typ. 4.7nC ) • Low Crss ( Typ. 6.3pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS comp	Fairchild Semiconductor

FDU6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDU6680	30V N-Channel PowerTrench MOSFET FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet	Fairchild Semiconductor
FDU6796A	N-Channel MOSFET FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench® MOSFET 25 V, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using	Fairchild Semiconductor
FDU6780A	N-Channel MOSFET FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ Features Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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