Datasheet FDT439N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDT439N	N-Channel 2.5V Specified EnhancementMode Field Effect Transistor FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is esp	Fairchild Semiconductor

FDT4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDT434P	P-Channel 2.5V Specified PowerTrench MOSFET FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Fairchild Semiconductor
FDT439N	N-Channel 2.5V Specified EnhancementMode Field Effect Transistor FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high de	Fairchild Semiconductor
FDT461N	N-Channel Logic Level PowerTrench MOSFET FDT461N April 2004 FDT461N N-Channel Logic Level PowerTrench® MOSFET 100V, 0.4A, 2.5Ω Features • rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Qg(tot) = 2.36nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode Applications • Servo Motor Load Control	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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