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Datasheet FDS8936 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor May 1998
FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim |
 Fairchild Semiconductor |
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| 2 | FDS8936A | Dual N-Channel Enhancement Mode Field Effect Transistor May 1998
FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim |
Fairchild Semiconductor |
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| 1 | FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor August 1997
FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor
GeneralDescription
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to pr |
Fairchild Semiconductor |
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