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Datasheet FDS89161 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDS89161 | Dual N-Channel MOSFET FDS89161 Dual N-Channel PowerTrench® MOSFET
June 2011
FDS89161
Dual N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) |
 Fairchild Semiconductor |
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| 1 | FDS89161LZ | Dual N-Channel MOSFET FDS89161LZ Dual N-Channel PowerTrench® MOSFET
June 2011
FDS89161LZ
Dual N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS( |
Fairchild Semiconductor |
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