Datasheet FDS89141 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDS89141	Dual N-Channel MOSFET FDS89141 Dual N-Channel PowerTrench® MOSFET December 2010 FDS89141 Dual N-Channel PowerTrench® MOSFET 100 V, 3.5 A, 62 mΩ Features Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A High performance trench technology for extremely low rDS(on)	Fairchild Semiconductor

FDS89 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDS8958A	Dual N & P-Channel Enhancement Mode Field Effect Transistor FDS8958A July 2003 FDS8958A Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to	Fairchild Semiconductor
FDS8958	Dual N & P-Channel PowerTrench MOSFET FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been es	Fairchild Semiconductor
FDS8962C	Dual N & P-Channel PowerTrench MOSFET FDS8962C Dual N & P-Channel PowerTrench® MOSFET June 2006 FDS8962C Dual N & P-Channel PowerTrench® MOSFET Features ■ Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V ■ Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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