|
|
Datasheet FDP8N50NZ Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | FDP8N50NZ | N-Channel UniFET II MOSFET FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
October 2013
FDP8N50NZ / FDPF8N50NZ
500 V, 8 A, 850 m Features
• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Im |
Fairchild Semiconductor |
|
2 | FDP8N50NZF | N-Channel MOSFET FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
February 2012
UniFET-IITM
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω Features
• RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested • Impro |
Fairchild Semiconductor |
|
1 | FDP8N50NZU | N-Channel MOSFET FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET
FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
February 2010
UniFET-IITM
tm
Features
• RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested |
Fairchild Semiconductor |
Esta página es del resultado de búsqueda del FDP8N50NZ. Si pulsa el resultado de búsqueda de FDP8N50NZ se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |