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FDP10N60NZ Price ( Datasheet, Hoja de datos )

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1 FDP10N60NZ   N-Channel UniFET II MOSFET

FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 23 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP10N60NZ pdf

FDP10N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
FDP10N60NZ

N-Channel UniFET II MOSFET

FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 23 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improv
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP10N60NZ pdf
FDP10N60ZU

MOSFET

FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω April 2009 UniFETTM tm Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) • Low Crss ( Typ. 15pF) • Fast switching • 100%
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP10N60ZU pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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