Datasheet FDN335N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDN335N	N-Channel 2.5V Specified PowerTrenchTM MOSFET FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate	Fairchild Semiconductor

FDN3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDN360P	Single P-Channel PowerTrenchTM MOSFET FDN360P February 1999 FDN360P Single P-Channel PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain	Fairchild Semiconductor
FDN360	Single P-Channel PowerTrenchTM MOSFET FDN360P February 1999 FDN360P Single P-Channel PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain	Fairchild Semiconductor
FDN337N	N-Channel Logic Level Enhancement Mode Field Effect Transistor March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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