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FDMS8820 Price ( Datasheet, Hoja de datos )

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1 FDMS8820   N-Channel PowerTrench MOSFET

FDMS8820 N-Channel PowerTrench® MOSFET FDMS8820 N-Channel PowerTrench® MOSFET 30 V, 160 A, 2.0 mΩ Features „ Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDMS8820 pdf

FDMS8 Datasheet ( Hoja de datos ) - resultados coincidentes

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FDMS86368

N-Channel PowerTrench MOSFET

FDMS86368_F085 N-Channel PowerTrench® MOSFET FDMS86368_F085 N-Channel PowerTrench® MOSFET 80 V, 80 A, 4.5 mΩ December 2014 Features „ Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDMS86368 pdf
FDMS8670S

N-Channel PowerTrench SyncFETTM

FDMS8670S N-Channel PowerTrench® SyncFETTM December 2006 FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5mΩ Features General Description „ Max rDS(on) = 3.5mΩ at VGS = 10V, ID = 20A „ Max rDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A „ Advanced Pa
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDMS8670S pdf
FDMS86263P

MOSFET

FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53 mΩ Features „ Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDMS86263P pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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