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Datasheet FDMS86350 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDMS86350 | N-Channel MOSFET FDMS86350 N-Channel PowerTrench® MOSFET
April 2013
FDMS86350
N-Channel PowerTrench® MOSFET
80 V, 80 A, 2.4 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-sta |
 Fairchild Semiconductor |
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| 1 | FDMS86350ET80 | MOSFET ( Transistor ) FDMS86350ET80 N-Channel PowerTrench® MOSFET
January 2015
FDMS86350ET80
N-Channel PowerTrench® MOSFET
80 V, 198 A, 2.4 mΩ
Features
General Description
Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced |
Fairchild Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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