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Datasheet FDMC86160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDMC86160 | N-Channel Power Trench MOSFET FDMC86160 N-Channel Power Trench® MOSFET
January 2013
FDMC86160
N-Channel Power Trench® MOSFET
100 V, 43 A, 14 mΩ
Features
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Le |
 Fairchild Semiconductor |
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| 1 | FDMC86160ET100 | MOSFET ( Transistor ) FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET
FDMC86160ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 43 A, 14 mΩ
January 2015
Features
General Description
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 |
Fairchild Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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