|
|
Datasheet FDMC86012 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | FDMC86012 | MOSFET ( Transistor ) FDMC86012 N-Channel Power Trench® MOSFET
October 2012
FDMC86012
N-Channel Power Trench® MOSFET
30 V, 88 A, 2.7 mΩ
Features
Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A High performance technology for extremely low rDS(on) Termina |
Fairchild Semiconductor |
FDMC86 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
FDMC86106LZ | N-Channel Power Trench MOSFET |
Fairchild Semiconductor |
|
FDMC86240 | N-Channel MOSFET |
Fairchild Semiconductor |
|
FDMC8622 | N-Channel Power Trench MOSFET |
Fairchild Semiconductor |
Esta página es del resultado de búsqueda del FDMC86012. Si pulsa el resultado de búsqueda de FDMC86012 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |