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Datasheet FDG313N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | FDG313N | Digital FET/ N-Channel FDG313N
July 2000
FDG313N
Digital FET, N-Channel
General Description
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This de |
Fairchild Semiconductor |
FDG3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
FDG330P | P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
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FDG312P | P-Channel 2.5V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
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FDG326P | P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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