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Datasheet FDD6637 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDD6637 | 35V P-Channel PowerTrench MOSFET FDD6637 35V P-Channel PowerTrench® MOSFET
August 2006
FDD6637
35V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior p |
 Fairchild Semiconductor |
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| 1 | FDD6637_F085 | P-Channel PowerTrench MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET
FDD6637_F085
P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ
Features
Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extrem |
Fairchild Semiconductor |
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