Datasheet FDD5N53 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDD5N53	N-Channel MOSFET FDD5N53 / FDU5N53 N-Channel MOSFET January 2009 FDD5N53/FDU5N53 N-Channel MOSFET 530V, 4A, 1.5Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS c	Fairchild Semiconductor

FDD5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDD5614P	60V P-Channel PowerTrench MOSFET FDD5614P February 2001 FDD5614P 60V P-Channel PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –15 A, –60 V. RDS(ON) = 100 mΩ @ V	Fairchild Semiconductor
FDD5614	60V P-Channel PowerTrench MOSFET FDD5614P February 2001 FDD5614P 60V P-Channel PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –15 A, –60 V. RDS(ON) = 100 mΩ @ V	Fairchild Semiconductor
FDD5612	60V N-Channel PowerTrench MOSFET FDD5612 July 1999 ADVANCE INFORMATION FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Th	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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