Datasheet FDC6561AN Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDC6561AN	Dual N-Channel Logic Level PowerTrenchTM MOSFET April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO	Fairchild Semiconductor

FDC656 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDC6561AN	Dual N-Channel Logic Level PowerTrenchTM MOSFET April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smal	Fairchild Semiconductor
FDC6561	Dual N-Channel Logic Level PowerTrenchTM MOSFET April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smal	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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