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Datasheet FDB2670 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FDB2670 | N-Channel PowerTrench MOSFET SMD Type
MOSFET
200V N-Channel PowerTrench MOSFET KDB2670(FDB2670)
Features
19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
+0.25.28 -0.2
+0.28. |
Kexin |
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1 | FDB2670 | 200V N-Channel PowerTrench MOSFET FDP2670/FDB2670
November 2001
FDP2670/FDB2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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