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Datasheet FDB2670 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 FDB2670   N-Channel PowerTrench MOSFET

SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.
Kexin
Kexin
datasheet FDB2670 pdf
1 FDB2670   200V N-Channel PowerTrench MOSFET

FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDB2670 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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