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Datasheet FDA20N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FDA20N50 | 500V N-Channel MOSFET FDA20N50 500V N-Channel MOSFET
January 2006
UniFET
FDA20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
T |
 Fairchild Semiconductor |
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| 2 | FDA20N50F | N-Channel MOSFET FDA20N50F N-Channel UniFETTM FRFET® MOSFET
March 2013
FDA20N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 22 A, 260 m
Features
• RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 11 A • Low Gate Charge (Typ. 50 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested • Improved dv/dt Capabi |
Fairchild Semiconductor |
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| 1 | FDA20N50_F109 | N-Channel UniFET MOSFET FDA20N50_F109 — N-Channel UniFETTM MOSFET
FDA20N50_F109
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ
Features
• RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested • Improved dv/dt Capability
Applications
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Fairchild Semiconductor |
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