Datasheet FCB11N60F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FCB11N60F	N-Channel MOSFET FCB11N60F 600V N-Channel MOSFET SuperFET FCB11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested	Fairchild Semiconductor

FCB11N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FCB11N60	N-Channel MOSFET FCB11N60 600V N-Channel MOSFET SuperFET FCB11N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested TM Description Supe	Fairchild Semiconductor
FCB11N60F	N-Channel MOSFET FCB11N60F 600V N-Channel MOSFET SuperFET FCB11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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