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Datasheet FCA20N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FCA20N60 | N-Channel MOSFET FCA20N60 — N-Channel SuperFET® MOSFET
August 2014
FCA20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
• 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanch |
 Fairchild Semiconductor |
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| 3 | FCA20N60F | N-CHANNEL FRFET MOSFET FCA20N60F — N-Channel SuperFET® FRFET® MOSFET
FCA20N60F
May 2014
N-Channel SuperFET® FRFET® MOSFET
600 V, 20 A, 190 mΩ
Features
Description
• 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Fast Recovery Type (Typ. Trr = 160 ns ) • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • L |
Fairchild Semiconductor |
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| 2 | FCA20N60S | N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET
FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
August 2007
SuperFETTM
Features
• 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche t |
Fairchild Semiconductor |
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| 1 | FCA20N60S_F109 | N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET
FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
August 2007
SuperFETTM
Features
• 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche t |
Fairchild Semiconductor |
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