Datasheet F1404ZS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	F1404ZS	IRF1404ZS PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the late	IRF

F140 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
F1404ZS	IRF1404ZS PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSF	IRF
F1400A	Clock Oscillator F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator • Former Product OBSOLETE Pin Connections X O 95	MTRONPTI
F1401	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gol	Polyfet RF Devices

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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