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Datasheet F1060 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | F1060 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
Polyfet RF Devices |
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1 | F1060CT | Schottky Barrier Rectifiers Production specification
Schottky Barrier Rectifiers
FEATURES
z
STSD F1030CT---STSD F1060CT
Metal-Semiconductor Junction with Guard Ring.
z Epit axial Construction. z
Pb
Lead-free Low Forward Voltage Drop,Low Switching Losses. Surge Capability.
z High z
For use in low voltage,high frequency |
Tasund |
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