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Datasheet EMF24 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | EMF24 | Dual Transistors -,$1*68 &+$1*-,$1* (/(&7521,&6 7(&+12/2*< &2 /7'
JCET 627 3ODVWLF(QFDSVXODWH 7UDQVLVWRUV
(0) Dual Transistors (NPN+NPN)
)($785(6 z 6& DQG '7&( DUH KRXVHG LQGHSHQGHQWO LQ D SDFNDJH z 3RZHU PDQDJHPHQW FLUFXLW z 3RZHU VZLWFKLQJ FLUFXLW LQ D VLQJOH SDFNDJH z 0RXQWLQJ FRVW DQG DUHD FDQ |
JCET |
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3 | EMF24 | dual transistors Power management (dual transistors)
EMF24
FEATURES z 2SC4617 and DTC114E are housed independently in a package. z Power management circuit z Power switching circuit in a single package z Mounting cost and area can be cut in half
SOT-563 1
MARKING: F24
TR1 MAXIMUM RATINGS (Ta=25℃ unless otherw |
JinYu |
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2 | EMF24 | Power management
EMF24 / UMF24N
Transistors
Power management (dual transistors)
EMF24 / UMF24N
2SC4617 and DTC114E are housed independently in a EMT6 or UMT6 package.
zExternal dimensions (Units : mm) zApplication Power management circuit
EMF24
0.22
(4) (5) (6) (3) (2)
zFeatures 1) Power swit |
ROHM Semiconductor |
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1 | EMF24N02Q | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
24mΩ
ID 6A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMET |
Excelliance MOS |
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Número de pieza | Descripción | Fabricantes | |
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