Datasheet EMB80P03G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	EMB80P03G	Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V D RDSON (MAX.) 80mΩ ID ‐3.5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)	Excelliance MOS

EMB80P Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
EMB80P03JS	Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V D RDSON (MAX.) 85mΩ ID ‐3.6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless	Excelliance MOS
EMB80P03J	Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V D RDSON (MAX.) 85mΩ ID ‐3A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Oth	Excelliance MOS
EMB80P03G	Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V D RDSON (MAX.) 80mΩ ID ‐3.5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless	Excelliance MOS

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Número de pieza	Descripción	Fabricantes	PDF
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