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Datasheet E28F010-90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | E28F010-90 | 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti |
 Intel Corporation |
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| 1 | E28F010-90 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti |
Intel Corporation |
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