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DMT8012LK3 Price ( Datasheet, Hoja de datos )

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1 DMT8012LK3   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INFORMATION DMT8012LK3 Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) max 17mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TC = +25°C 44A 38A Features  Low RDS(ON) – ensures on state losses are minimized  High Conversion Efficiency  Low Input Ca
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datasheet DMT8012LK3 pdf

DMT8012 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMT8012LPS

N-CHANNEL ENHANCEMENT MODE MOSFET

DMT8012LPS Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary BVDSS 80V RDS(ON) 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC = +25°C 65A 59A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintai
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datasheet DMT8012LPS pdf
DMT8012LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID Max TA = +25°C 9.7A 8.8A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency 
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datasheet DMT8012LSS pdf
DMT8012LK3

N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INFORMATION DMT8012LK3 Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) max 17mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TC = +25°C 44A 38A Features  Low RDS(ON) – ensures on state losses are minimized  High Conversion Efficie
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datasheet DMT8012LK3 pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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