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Datasheet DMT10H010LPS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMT10H010LPS   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INFORMATION Product Summary Green DMT10H010LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features BVDSS 100V RDS(ON) Max 8.3mΩ @ VGS = 10V ID TC = +25°C 98A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior
 Diodes
Diodes		 datasheet DMT10H010LPS pdf

DMT10H010 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMT10H010LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V ID TC = +25°C 29.5A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is desig
 Diodes
Diodes		 datasheet pdf - Diodes
DMT10H010LK3

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.3mΩ @ VGS = 6.0V ID TC = +25°C 68.8A 60.7A Green DMT10H010LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low R
 Diodes
Diodes		 datasheet pdf - Diodes
DMT10H010LCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Green DMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 9.5mΩ @VGS = 10V Package TO220AB ID TC = +25°C 98A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency po
 Diodes
Diodes		 datasheet pdf - Diodes


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SPS122

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