Datasheet DMP2100UCB9 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMP2100UCB9	DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 80mΩ Qg 3.3nC Qgd 0.6nC ID -4A Description This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior swit	Diodes

DMP2100U Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMP2100UCB9	DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 80mΩ Qg 3.3nC Qgd 0.6nC ID -4A Description This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet ma	Diodes
DMP2100UFU	DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NAEDWVPARNOCDEUICNTF O R M A T I O N DMP2100UFU DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) max 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V ID TA = +25°C -5.7A -5.4A -4.1A Description This new generation MOSFET has been desig	Diodes
DMP2100U	P-CHANNEL ENHANCEMENT MODE MOSFET DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) MAX 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V Package SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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