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Datasheet DMP10H4D2S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMP10H4D2S   P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary V(BR)DSS 100V RDS(ON) 4.2Ω @ VGS = -10V 5.0Ω @ VGS = -4.0V ID TA = +25°C -0.27A -0.24A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it
Diodes
Diodes
datasheet DMP10H4D2S pdf

DMP10H4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMP10H400SK3

100V P-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -100V RDS(on) max 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TC = +25°C -9A -8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and
Diodes
Diodes
datasheet pdf - Diodes
DMP10H4D2S

P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary V(BR)DSS 100V RDS(ON) 4.2Ω @ VGS = -10V 5.0Ω @ VGS = -4.0V ID TA = +25°C -0.27A -0.24A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching per
Diodes
Diodes
datasheet pdf - Diodes
DMP10H400SEQ

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary BVDSS -100V RDS(ON) Max 250m @ VGS = -10V 300m @ VGS = -4.5V ID TA = +25C -2.3A -2.1A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP
Diodes
Diodes
datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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