Datasheet DMNH10H028SPSQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMNH10H028SPSQ	N-CHANNEL ENHANCEMENT MODE MOSFET Green DMNH10H028SPSQ 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 100V RDS(ON) 28mΩ @ VGS = 10V ID TC = +25°C 40A Features  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Los	Diodes

DMNH10H028S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMNH10H028SPSQ	N-CHANNEL ENHANCEMENT MODE MOSFET Green DMNH10H028SPSQ 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 100V RDS(ON) 28mΩ @ VGS = 10V ID TC = +25°C 40A Features  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Mi	Diodes
DMNH10H028SPS	N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Green DMNH10H028SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features V(BR)DSS 100V RDS(ON) 28mΩ @ VGS = 10V ID TC = +25°C 40A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switchin	Diodes
DMNH10H028SK3Q	N-CHANNEL ENHANCEMENT MODE MOSFET A D VNAEN CWEPDRIONDFUOCRTM A T I O N Green DMNH10H028SK3Q 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 28mΩ @ VGS = 10V ID max TC = +25°C 55A Description and Applications This MOSFET is designed to meet the stringent requiremen	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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