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Datasheet DMN63D8L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | DMN63D8L | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON) max
2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V
ID max TA = +25°C
350mA
300mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficien |
Diodes |
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3 | DMN63D8LDW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DMN63D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V RDS(ON) 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V ID TA = 25°C 200mA 260mA
Features
• • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Moun |
Diodes Incorporated |
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2 | DMN63D8LV | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON)
4.2Ω @ VGS = 5V 2.8Ω @ VGS = 10V
ID TA = 25°C
200mA
260mA
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high effici |
Diodes |
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1 | DMN63D8LW | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON) max
2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V
ID max TA = +25°C
380mA
330mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficien |
Diodes |
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Número de pieza | Descripción | Fabricantes | |
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