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Datasheet DMN63D8L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 DMN63D8L   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 30V RDS(ON) max 2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 350mA 300mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficien
Diodes
Diodes
datasheet DMN63D8L pdf
3 DMN63D8LDW   DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN63D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V ID TA = 25°C 200mA 260mA Features • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Moun
Diodes Incorporated
Diodes Incorporated
datasheet DMN63D8LDW pdf
2 DMN63D8LV   DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT Product Summary V(BR)DSS 30V RDS(ON) 4.2Ω @ VGS = 5V 2.8Ω @ VGS = 10V ID TA = 25°C 200mA 260mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high effici
Diodes
Diodes
datasheet DMN63D8LV pdf
1 DMN63D8LW   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 30V RDS(ON) max 2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 380mA 330mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficien
Diodes
Diodes
datasheet DMN63D8LW pdf


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Número de pieza Descripción Fabricantes PDF
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