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Datasheet DMN53D0LV Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN53D0LV   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and ye
 Diodes
Diodes		 datasheet DMN53D0LV pdf

DMN53D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN53D0LT

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (
 Diodes
Diodes		 datasheet pdf - Diodes
DMN53D0LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance �
 Diodes
Diodes		 datasheet pdf - Diodes
DMN53D0U

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage
 Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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