Datasheet DMN4800LSSL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN4800LSSL	N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.0A 6.7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency powe	Diodes

DMN4800L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN4800LSS	N-CHANNEL ENHANCEMENT MODE MOSFET DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Features  Lo       w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Diodes
DMN4800LSSQ	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior sw	Diodes
DMN4800LSSL	N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.0A 6.7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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